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2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Output Characteristics and Operating Conditions
Table 76: Differential Output Slew Rate (Continued)
Value
Parameter
Differential output slew rate (output impedance = 60 Ω
Symbol
SRQ diff
Min
2.0
Max
5.0
Unit
V/ns
Notes:
1. Definitions: SR = slew rate; Q = output (similar to DQ = data-in, data-out); SE = single-
ended signals.
2. Measured with output reference load.
3. The output slew rate for falling and rising edges is defined and measured between
V OL(AC) and V OH(AC) .
4. Slew rates are measured under typical simultaneous switching output (SSO) conditions,
with one-half of DQ signals per data byte driving HIGH and one-half of DQ signals per
data byte driving LOW.
Table 77: AC Overshoot/Undershoot Specification
Applies for CA[9:0], CS#, CKE, CK, CK#, DQ, DQS, DQS#, D M
Parameter
Maximum peak amplitude provided for overshoot area
Maximum peak amplitude provided for undershoot area
Maximum area above V DD1
Maximum area below V SS2
1066
0.35
0.35
0.15
0.15
933
0.35
0.35
0.17
0.17
800
0.35
0.35
0.20
0.20
667
0.35
0.35
0.24
0.24
533
0.35
0.35
0.30
0.30
400
0.35
0.35
0.40
0.40
333
0.35
0.35
0.48
0.48
Unit
V
V
V/ns
V/ns
Notes:
1. V DD stands for V DDCA for CA[9:0], CK, CK#, CS#, and CKE. V DD stands for V DDQ for DQ,
DM, DQS, and DQS#.
2. V SS stands for V SSCA for CA[9:0], CK, CK#, CS#, and CKE. V SS stands for V SSQ for DQ, DM,
DQS, and DQS#.
Figure 91: Overshoot and Undershoot Definition
Maximum amplitude
Overshoot area
V DD
V SS
Time (ns)
Maximum amplitude
Undershoot area
Notes:
1. V DD stands for V DDCA for CA[9:0], CK, CK#, CS#, and CKE. V DD stands for V DDQ for DQ,
DM, DQS, and DQS#.
2. V SS stands for V SSCA for CA[9:0], CK, CK#, CS#, and CKE. V SS stands for V SSQ for DQ, DM,
DQS, and DQS#.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
130
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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